Engineering of Voltage Controlled Magnetic Anisotropy Magnetic Tunnel Junctions at Cryogenic Temperatures

نویسندگان

چکیده

We identified through numerical simulations the optimal condition to have a deterministic switching regime assisted by Voltage Controlled Magnetic Anisotropy (VCMA). To minimize write energy required reach this regime, we measure VCMA coefficient ξ on perpendicular magnetic tunnel junctions (pMTJ) with high resistance-area product (RA) and varying thicknesses of FeCoB storage layer naturally oxidized barrier. The is higher as effective anisotropy decreases, which case for larger Mg thicknesses. temperature dependence was shown increase from room 5K, showing values up 35 fJ/Vm at 10K.

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ژورنال

عنوان ژورنال: IEEE Transactions on Magnetics

سال: 2023

ISSN: ['1941-0069', '0018-9464']

DOI: https://doi.org/10.1109/tmag.2023.3284503